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Freescale Semiconductor Technical Data
Document Number: MW6S004N Rev. 2, 2/2007
RF Power Field Effect Transistor
N - Channel Enhancement - Mode Lateral MOSFET
Designed for Class A or Class AB base station applications with frequencies up to 2000 MHz. Suitable for analog and digital modulation and multicarrier amplifier applications. * Typical Two - Tone Performance @ 1960 MHz, 28 Volts, IDQ = 50 mA, Pout = 4 Watts PEP Power Gain -- 18 dB Drain Efficiency -- 33% IMD -- - 34 dBc * Typical Two - Tone Performance @ 900 MHz, 28 Volts, IDQ = 50 mA, Pout = 4 Watts PEP Power Gain -- 19 dB Drain Efficiency -- 33% IMD -- - 39 dBc * Capable of Handling 5:1 VSWR, @ 28 Vdc, 1960 MHz, 4 Watts CW Output Power Features * Characterized with Series Equivalent Large - Signal Impedance Parameters * On - Chip RF Feedback for Broadband Stability * Integrated ESD Protection * RoHS Compliant * In Tape and Reel. T1 Suffix = 1000 Units per 12 mm, 7 inch Reel.
MW6S004NT1
1 - 2000 MHz, 4 W, 28 V LATERAL N - CHANNEL RF POWER MOSFET
CASE 466 - 03, STYLE 1 PLD 1.5 PLASTIC
Table 1. Maximum Ratings
Rating Drain - Source Voltage Gate - Source Voltage Storage Temperature Range Operating Junction Temperature Symbol VDSS VGS Tstg TJ Value - 0.5, +68 - 0.5, +12 - 65 to +150 150 Unit Vdc Vdc C C
Table 2. Thermal Characteristics
Characteristic Thermal Resistance, Junction to Case Case Temperature 76C, 4 W PEP, Two - Tone Case Temperature 79C, 4 W CW Symbol RJC Value (1,2) 8.8 8.5 Unit C/W
Table 3. ESD Protection Characteristics
Test Methodology Human Body Model (per JESD22 - A114) Machine Model (per EIA/JESD22 - A115) Charge Device Model (per JESD22 - C101) Class 1A (Minimum) A (Minimum) III (Minimum)
1. MTTF calculator available at http://www.freescale.com/rf. Select Tools/Software/Application Software/Calculators to access the MTTF calculators by product. 2. Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.freescale.com/rf. Select Documentation/Application Notes - AN1955.
(c) Freescale Semiconductor, Inc., 2007. All rights reserved.
MW6S004NT1 1
RF Device Data Freescale Semiconductor
Table 4. Moisture Sensitivity Level
Test Methodology Per JESD 22 - A113, IPC/JEDEC J - STD - 020 Rating 1 Package Peak Temperature 260 Unit C
Table 5. Electrical Characteristics (TC = 25C unless otherwise noted)
Characteristic Off Characteristics Zero Gate Voltage Drain Leakage Current (VDS = 68 Vdc, VGS = 0 Vdc) Zero Gate Voltage Drain Leakage Current (VDS = 28 Vdc, VGS = 0 Vdc) Gate - Source Leakage Current (VGS = 5 Vdc, VDS = 0 Vdc) On Characteristics Gate Threshold Voltage (VDS = 10 Vdc, ID = 50 mAdc) Gate Quiescent Voltage (VDS = 28 Vdc, ID = 50 mAdc) Fixture Gate Quiescent Voltage (1) (VDD = 28 Vdc, ID = 50 mAdc, Measured in Functional Test) Drain - Source On - Voltage (VGS = 10 Vdc, ID = 50 mAdc) Dynamic Characteristics Reverse Transfer Capacitance (VDS = 28 Vdc 30 mV(rms)ac @ 1 MHz, VGS = 0 Vdc) Output Capacitance (VDS = 28 Vdc 30 mV(rms)ac @ 1 MHz, VGS = 0 Vdc) Input Capacitance (VDS = 28 Vdc 30 mV(rms)ac @ 1 MHz, VGS = 0 Vdc) Crss Coss Ciss -- -- -- 21 25 30 -- -- -- pF pF pF VGS(th) VGS(Q) VGG(Q) VDS(on) 1.2 -- 2.2 -- 2 2.7 3 0.27 2.7 -- 4.2 0.37 Vdc Vdc Vdc Vdc IDSS IDSS IGSS -- -- -- -- -- -- 10 10 500 Adc Adc nAdc Symbol Min Typ Max Unit
Functional Tests (In Freescale Test Fixture, 50 ohm system) VDD = 28 Vdc, IDQ = 50 mA, Pout = 4 W PEP, f1 = 1960 MHz, f2 = 1960.1 MHz, Two - Tone Test Power Gain Drain Efficiency Intermodulation Distortion Input Return Loss Gps D IMD IRL 16.5 28 -- -- 18 33 - 34 - 12 20 -- - 28 - 10 dB % dBc dB
Typical Performances (In Freescale 900 MHz Demo Board, 50 ohm system) VDD = 28 Vdc, IDQ = 50 mA, Pout = 4 W PEP, f = 900 MHz, Two - Tone Test, 100 kHz Tone Spacing Power Gain Drain Efficiency Intermodulation Distortion Input Return Loss
11/
Gps D IMD IRL
-- -- -- --
19 33 - 39 - 12
-- -- -- --
dB % dBc dB
1. VGG = 10 x VGS(Q). Parameter measured on Freescale Test Fixture, due to resistive divider network on the board. Refer to Test Circuit Schematic.
MW6S004NT1 2 RF Device Data Freescale Semiconductor
R1 VBIAS + C8 R2 C1 C7 Z5 Z10 R3 Z1 C2 Z2 Z3 Z4 Z6 Z7 Z8 C6 DUT Z9 C3 C4 C5
VSUPPLY
RF OUTPUT
RF INPUT
Z1 Z2 Z3 Z4 Z5 Z6
0.054 0.054 0.580 0.580 0.025 0.210
x 0.430 x 0.137 x 0.420 x 0.100 x 0.680 x 0.100
Microstrip Microstrip Microstrip Microstrip Microstrip Microstrip
Z7 Z8 Z9 Z10 PCB
0.210 x 1.220 Microstrip 0.054 x 0.680 Microstrip 0.054 x 0.260 Microstrip 0.025 x 0.930 Microstrip Arlon CuClad 250, 0.020, r = 2.5
Figure 1. MW6S004NT1 Test Circuit Schematic
Table 6. MW6S004NT1 Test Circuit Component Designations and Values
Part C1 C2, C3, C6, C7 C4, C5 C8 R1 R2 R3 Description 100 nF Chip Capacitor 9.1 pF Chip Capacitors 10 F, 50 V Chip Capacitors 10 F, 35 V Tantalum Chip Capacitor 1 k, 1/4 W Chip Resistor 10 k, 1/4 W Chip Resistor 10 , 1/4 W Chip Resistor Part Number CDR33BX104AKYS ATC600B9R1CT500XT GRM55DR61H106KA88B T490D106K035AT CRCW12061000FKTA CRCW12061001FKTA CRCW120610R0FKTA Manufacturer Kemet ATC Murata Kemet Vishay Vishay Vishay
MW6S004NT1 RF Device Data Freescale Semiconductor 3
25
C8
R1
R2
C1
C7
C3
C4
C5
C2
R3
C6
MW6S004N Rev 3
Figure 2. MW6S004NT1 Test Circuit Component Layout
MW6S004NT1 4 RF Device Data Freescale Semiconductor
TYPICAL CHARACTERISTICS
18.4 18.2 18 Gps, POWER GAIN (dB) 17.8 17.6 17.4 17.2 17 16.8 16.6 16.4 1930 1940 1950 IM3 1960 1970 1980 IRL VDD = 28 Vdc, Pout = 2 W (Avg.) IDQ = 50 mA, 100 kHz Tone Spacing Gps D 34 33 32 31 30 -30 -31 -32 -33 -34 -35 1990 IM3 (dBc) D, DRAIN EFFICIENCY (%)
-8 -12 -16 -20 -24 -28
f, FREQUENCY (MHz)
Figure 3. Two - Tone Wideband Performance @ Pout = 2 Watts Avg.
20 19 Gps, POWER GAIN (dB) 62.5 mA 18 17 16 25 mA 15 14 0.01 VDD = 28 Vdc f1 = 1960 MHz, f2 = 1960.1 MHz Two -Tone Measurements 0.1 1 10 20 50 mA 37.5 mA -10 -20 -30 -40 -50 -60 -70 7th Order -80 0.01 0.1 1 10 Pout, OUTPUT POWER (WATTS) PEP 3rd Order VDD = 28 Vdc, IDQ = 50 mA f1 = 1960 MHz, f2 = 1960.1 MHz Two -Tone Measurements
IDQ = 75 mA
IMD, INTERMODULATION DISTORTION (dBc)
5th Order
Pout, OUTPUT POWER (WATTS) PEP
Figure 4. Two - Tone Power Gain versus Output Power
-25 -30 -35 3rd Order -40 -45 -50 -55 7th Order -60 0.1 33 1 10 100 14 5th Order VDD = 28 Vdc, Pout = 2 W (Avg.), IDQ = 50 mA (f1 + f2)/2 = Center Frequency of 1960 MHz Pout, OUTPUT POWER (dBm)
Figure 5. Intermodulation Distortion Products versus Output Power
47 P6dB = 38.73 dBm (7.465 W) 45 43 41 P1dB = 37.61 dBm (5.768 W) 39 Actual 37 35 VDD = 28 Vdc, IDQ = 50 mA Pulsed CW, 8 sec(on), 1 msec(off) f = 1960 MHz 16 18 20 22 24 26 P3dB = 38.22 dBm (6.637 W) Ideal
IMD, INTERMODULATION DISTORTION (dBc)
TWO -TONE SPACING (MHz)
Pin, INPUT POWER (dBm)
Figure 6. Intermodulation Distortion Products versus Tone Spacing
Figure 7. Pulsed CW Output Power versus Input Power
IRL, INPUT RETURN LOSS (dB)
MW6S004NT1 RF Device Data Freescale Semiconductor 5
TYPICAL CHARACTERISTICS
D, DRAIN EFFICIENCY (%), Gps, POWER GAIN (dB) 50 VDD = 28 Vdc, IDQ = 50 mA f = 1960 MHz, N-CDMA IS-95 (Pilot, Sync, Paging, Traffic Codes 8 Through 13) -20
40
-30
20
Gps
-50
10 0
ACPR D
-60 -70
0.01
0.1
1
10
Pout, OUTPUT POWER (WATTS) AVG.
Figure 8. Single - Carrier CDMA ACPR, Power Gain and Drain Efficiency versus Output Power
20 19 Gps, POWER GAIN (dB) 18 85_C 17 16 15 14 0.01 VDD = 28 Vdc IDQ = 50 mA f = 1960 MHz 30 20 D 10 0 0.1 1 10 Pout, OUTPUT POWER (WATTS) CW TC = -30_C 25_C -30_C Gps 85_C D, DRAIN EFFICIENCY (%) 50 40 60
Figure 9. Power Gain and Drain Efficiency versus CW Output Power
22 IDQ = 50 mA f = 1960 MHz 0
19 18.5 Gps, POWER GAIN (dB) 18 17.5 S21 (dB) 17 16.5 16
ACPR (dB)
30
-40
20 S21
-5
16 VDD = 28 Vdc Pout = 2 W CW IDQ = 50 mA 1850 1900
-15
14 15.5 VDD = 24 V 15 0 1 2 3 4 5 6 Pout, OUTPUT POWER (WATTS) CW 28 V 7 32 V 8 12 1800
-20 S11 -25 2100
1950
2000
2050
f, FREQUENCY (MHz)
Figure 10. Power Gain versus Output Power
Figure 11. Broadband Frequency Response
MW6S004NT1 6 RF Device Data Freescale Semiconductor
S11 (dB)
18
-10
TYPICAL CHARACTERISTICS
107
MTTF (HOURS)
106
105
104 90 110 130 150 170 190 210 230 250 TJ, JUNCTION TEMPERATURE (C) This above graph displays calculated MTTF in hours when the device is operated at VDD = 28 Vdc, Pout = 4 W PEP, and D = 33%. MTTF calculator available at http:/www.freescale.com/rf. Select Tools/ Software/Application Software/Calculators to access the MTTF calcu- lators by product.
Figure 12. MTTF versus Junction Temperature
MW6S004NT1 RF Device Data Freescale Semiconductor 7
f = 1990 MHz Zload Zo = 10 f = 1930 MHz
f = 1990 MHz
Zsource
f = 1930 MHz
VDD = 28 Vdc, IDQ = 50 mA, Pout = 4 W PEP f MHz 1930 1960 1990 Zsource W 1.96 - j5.34 1.89 - j5.10 1.82 - j4.85 Zload W 8.78 + j6.96 8.93 + j7.46 9.11 + j7.97
Zsource = Test circuit impedance as measured from gate to ground. Zload = Test circuit impedance as measured from drain to ground. Output Matching Network
Input Matching Network
Device Under Test
Z
source
Z
load
Figure 13. Series Equivalent Source and Load Impedance
MW6S004NT1 8 RF Device Data Freescale Semiconductor
Table 7. Common Source Scattering Parameters (VDD = 28 V, 50 ohm system) IDQ = 50 mA
f MHz MH 500 550 600 650 700 750 800 850 900 950 1000 1050 1100 1150 1200 1250 1300 1350 1400 1450 1500 1550 1600 1650 1700 1750 1800 1850 1900 1950 2000 2050 2100 2150 2200 2250 2300 2350 2400 2450 S11 |S11| 0.649 0.695 0.733 0.770 0.800 0.827 0.848 0.866 0.882 0.895 0.907 0.916 0.923 0.929 0.935 0.938 0.942 0.945 0.948 0.951 0.953 0.954 0.955 0.956 0.957 0.957 0.958 0.959 0.959 0.960 0.959 0.959 0.958 0.958 0.957 0.957 0.955 0.954 0.953 0.953 - 116.340 - 121.680 - 126.560 - 131.340 - 135.740 - 140.030 - 143.950 - 147.690 - 151.140 - 154.560 - 157.590 - 160.540 - 163.310 - 165.930 - 168.430 - 170.770 - 173.030 - 175.140 - 177.170 - 179.090 179.030 177.270 175.570 173.980 172.350 170.800 169.340 167.920 166.510 165.200 163.800 162.420 161.170 159.840 158.560 157.160 155.870 154.510 153.120 151.730 |S21| 7.902 7.502 7.111 6.699 6.302 5.922 5.552 5.220 4.891 4.597 4.315 4.060 3.819 3.601 3.398 3.210 3.036 2.875 2.728 2.590 2.464 2.347 2.240 2.139 2.047 1.958 1.879 1.806 1.736 1.668 1.611 1.555 1.504 1.456 1.412 1.372 1.334 1.300 1.268 1.238 S21 105.420 98.790 92.380 86.290 80.450 74.850 69.630 64.580 59.970 55.490 51.240 47.170 43.340 39.650 36.110 32.740 29.490 26.360 23.330 20.440 17.640 14.920 12.320 9.740 7.250 4.810 2.440 0.260 - 1.980 - 4.310 - 6.240 - 8.290 - 10.270 - 12.210 - 14.130 - 16.010 - 17.870 - 19.700 - 21.510 - 23.250 |S12| 0.056 0.053 0.049 0.045 0.041 0.038 0.035 0.032 0.029 0.026 0.024 0.022 0.020 0.018 0.017 0.015 0.014 0.013 0.012 0.011 0.010 0.009 0.008 0.008 0.007 0.007 0.006 0.006 0.005 0.005 0.005 0.005 0.005 0.005 0.005 0.005 0.005 0.005 0.005 0.005 S12 - 73.750 - 80.570 - 87.010 - 93.280 - 99.120 - 104.850 - 110.110 - 115.220 - 119.960 - 124.790 - 129.090 - 133.370 - 137.460 - 141.440 - 145.330 - 149.540 - 153.430 - 157.460 - 161.910 - 166.180 - 170.630 - 174.890 179.950 173.920 167.710 161.810 155.370 148.940 142.630 136.740 129.910 123.810 118.200 112.740 108.460 103.840 99.310 95.360 91.030 87.460 |S22| 0.548 0.593 0.632 0.669 0.701 0.727 0.750 0.770 0.786 0.800 0.813 0.824 0.833 0.840 0.847 0.851 0.856 0.859 0.863 0.866 0.869 0.872 0.875 0.877 0.880 0.882 0.884 0.886 0.887 0.888 0.890 0.891 0.892 0.893 0.894 0.896 0.896 0.897 0.898 0.899 S22 - 33.570 - 41.480 - 48.890 - 56.000 - 62.810 - 69.290 - 75.350 - 81.130 - 86.570 - 91.730 - 96.660 - 101.340 - 105.790 - 110.050 - 114.170 - 118.060 - 121.880 - 125.520 - 129.020 - 132.390 - 135.650 - 138.760 - 141.750 - 144.650 - 147.480 - 150.180 - 152.760 - 155.230 - 157.580 - 160.050 - 162.070 - 164.190 - 166.140 - 168.060 - 169.840 - 171.610 - 173.260 - 174.830 - 176.390 - 177.840
MW6S004NT1 RF Device Data Freescale Semiconductor 9
Table 7. Common Source Scattering Parameters (VDD = 28 V, 50 ohm system) (continued) IDQ = 50 mA
f MHz MH 2500 2550 2600 2650 2700 2750 2800 2850 2900 2950 3000 S11 |S11| 0.952 0.950 0.949 0.948 0.944 0.944 0.943 0.941 0.940 0.938 0.937 150.340 149.010 147.380 145.920 144.200 142.790 141.020 139.410 137.640 135.900 133.860 |S21| 1.211 1.187 1.166 1.144 1.121 1.105 1.088 1.073 1.058 1.045 1.032 S21 - 25.120 - 26.920 - 28.650 - 30.420 - 32.310 - 34.230 - 36.000 - 37.870 - 39.760 - 41.680 - 43.610 |S12| 0.006 0.006 0.006 0.007 0.007 0.007 0.007 0.007 0.008 0.008 0.008 S12 84.160 80.780 77.880 74.670 71.360 67.980 63.950 61.230 59.810 58.280 56.740 |S22| 0.899 0.897 0.897 0.898 0.896 0.897 0.897 0.896 0.896 0.896 0.895 S22 - 179.270 179.420 178.120 176.840 175.480 174.060 172.930 171.630 170.330 169.040 167.510
MW6S004NT1 10 RF Device Data Freescale Semiconductor
PACKAGE DIMENSIONS
A F
3
B
D
1
2
R
L
NOTES: 1. INTERPRET DIMENSIONS AND TOLERANCES PER ASME Y14.5M, 1984. 2. CONTROLLING DIMENSION: INCH 3. RESIN BLEED/FLASH ALLOWABLE IN ZONE V, W, AND X.
4
N K Q
ZONE V
0.35 (0.89) X 45_" 5 _
U H
4
10_DRAFT
P C
Y
Y
E
ZONE W
1
2
3
G
S
STYLE 1: PIN 1. 2. 3. 4.
DRAIN GATE SOURCE SOURCE
ZONE X
DIM A B C D E F G H J K L N P Q R S U ZONE V ZONE W ZONE X
INCHES MIN MAX 0.255 0.265 0.225 0.235 0.065 0.072 0.130 0.150 0.021 0.026 0.026 0.044 0.050 0.070 0.045 0.063 0.160 0.180 0.273 0.285 0.245 0.255 0.230 0.240 0.000 0.008 0.055 0.063 0.200 0.210 0.006 0.012 0.006 0.012 0.000 0.021 0.000 0.010 0.000 0.010
MILLIMETERS MIN MAX 6.48 6.73 5.72 5.97 1.65 1.83 3.30 3.81 0.53 0.66 0.66 1.12 1.27 1.78 1.14 1.60 4.06 4.57 6.93 7.24 6.22 6.48 5.84 6.10 0.00 0.20 1.40 1.60 5.08 5.33 0.15 0.31 0.15 0.31 0.00 0.53 0.00 0.25 0.00 0.25
RF Device Data Freescale Semiconductor
EEEEEE EE EEEE EE EEEEEE EE EEEEEE EEEE EEEEEE EE
VIEW Y - Y
CASE 466 - 03 ISSUE D PLD 1.5 PLASTIC
MW6S004NT1 11
PRODUCT DOCUMENTATION
Refer to the following documents to aid your design process. Application Notes * AN1955: Thermal Measurement Methodology of RF Power Amplifiers Engineering Bulletins * EB212: Using Data Sheet Impedances for RF LDMOS Devices
REVISION HISTORY
The following table summarizes revisions to this document.
Revision 2 Date Feb. 2007 Description * Corrected MSL Rating from 3 to 1 in Table 4, Moisture Sensitivity Level, p. 2 * Updated VGS(th) and VGS(Q) to reflect tighter HV6 windows and added Fixture Gate Quiescent VGG(Q) to On Characteristics table to account for test fixture resistor divider network, p. 2 * Updated Part Numbers in Table 6, Component Designations and Values, to RoHS compliant part numbers, p. 3 * Removed lower voltage tests from Fig. 10, Power Gain versus Output Power, due to fixed tuned fixture limitations, p. 6 * Replaced Figure 12, MTTF versus Junction Temperature with updated graph. Removed Amps2 and listed operating characteristics and location of MTTF calculator for device, p. 7 * Added Product Documentation and Revision History section, p. 12
MW6S004NT1 12 RF Device Data Freescale Semiconductor
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MW6S004NT1
Document Number: RF Device Data MW6S004N Rev. 2, 2/2007 Freescale Semiconductor
13

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